SiC-GTO Thyristor Gate and Drift-Region Dopant Polarity Analysis Using Electrothermal Simulation.

Reports on two-dimensional electrothermal simulations to improve the reliability of high-power silicon carbide-gate turnoff thyristors. Occurrence of less device heating in a given number of cycles as indicated by transient mixed mode results; Observation of the hot spot to move from beneath the gate at the start of the turnoff to the corner formed by mesa isolation.