Back to Search
Start Over
Working toward high-power GaN/InGaN heterojunction bipolar transistors.
- Source :
-
Semiconductor Science & Technology . 2013, Vol. 28 Issue 7, p1-8. 8p. - Publication Year :
- 2013
-
Abstract
- III-nitride (III-N) heterojunction bipolar transistors (HBTs) are a less-explored electronic device technology due to the myriad research issues in material growth, device design and fabrication associated with these devices. For III-N HBTs, npn-GaN/InGaN heterostructures provide the benefits of mitigating the poor base electrical conductivity of p-type GaN and the problematic magnesium incorporation issues. Consequently, InGaN-base III-N HBTs are promising for next-generation high-power RF III-N systems. This paper will describe the current development status of npn GaN/InGaN HBTs grown either on sapphire or free-standing (FS) GaN substrates using optimized metalorganic chemical vapor deposition (MOCVD) and refined HBT processing techniques. Recombination current paths in GaN/InGaN HBTs are studied and small-signal equivalent circuits are developed. The extracted device model indicates that, with further device fabrication technique development, Johnson's figure of merit (JFOM) of GaN/InGaN HBTs can be as high as 5 THz V. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 28
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 90058838
- Full Text :
- https://doi.org/10.1088/0268-1242/28/7/074025