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Fabrication and Characterization of Enhancement-Mode High-\kappa~LaLuO3-AlGaN/GaN MIS-HEMTs.
- Source :
-
IEEE Transactions on Electron Devices . Oct2013, Vol. 60 Issue 10, p3040-3046. 7p. - Publication Year :
- 2013
-
Abstract
- In this paper, we investigate the enhancement-mode (E-mode) LaLuO3 (LLO)-AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) fabricated using fluorine (F) plasma ion implantation with a gate-dielectric-first planar process. The E-mode MIS-HEMTs exhibit a threshold voltage (VTH) of 0.6 V, a peak transconductance of \sim193~mS/mm, a small hysteresis of 0.04 V in linear region characterized by a pulse-mode current-voltage measurement, and significantly suppressed current collapse under high-drain-bias switching conditions. X-ray photoelectron spectroscopy and secondary ion mass spectrometry analyses manifest that the negatively charged F ions penetrating into the (Al)GaN barrier layer serve as the primary VTH modulation mechanism, whereas the F ions in the fluorinated LLO film form chemical bonds with La/Lu atoms and become charge-neutral. The suppressed current collapse is verified as an advantageous byproduct of the F plasma ion implantation that also fluorinated the SiNx sidewalls in the vicinity of the gate electrode, and therefore, suppress electron injection to the gate-drain access region. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 60
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 90677705
- Full Text :
- https://doi.org/10.1109/TED.2013.2277559