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Single-Event Upsets in Substrate-Etched CMOS SOI SRAMs Using Ultraviolet Optical Pulses With Sub-Micrometer Spot Size.
- Source :
-
IEEE Transactions on Nuclear Science . Dec2013 Part 1, Vol. 60 Issue 6, p4184-4191. 8p. - Publication Year :
- 2013
-
Abstract
- Ultraviolet optical pulses with a full-width-at-half-maximum diameter focused spot size of 0.32~\mu\m are generated, characterized, and used to produce SEUs in a 90 nm CMOS/SOI SRAM. The results provide unequivocal experimental evidence for cell-to-cell variations in SEU sensitivity that can be identified with process variations at the individual transistor level. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 60
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Nuclear Science
- Publication Type :
- Academic Journal
- Accession number :
- 93280967
- Full Text :
- https://doi.org/10.1109/TNS.2013.2290307