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High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2.
- Source :
-
Applied Physics Letters . 12/16/2013, Vol. 103 Issue 25, p253509. 5p. 4 Graphs. - Publication Year :
- 2013
-
Abstract
- Self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors (MOSFETs) have been fabricated using the gate dielectrics of in-situ directly atomic-layer-deposited (ALD) HfO2 followed by ALD-Al2O3. There were no surface pretreatments and no interfacial passivation/barrier layers prior to the ALD. TiN/Al2O3 (4 nm)/HfO2 (1 nm)/In0.53Ga0.47As/InP MOS capacitors exhibited well-behaved capacitance-voltage characteristics with true inversion behavior, low leakage current densities of ∼10-8 A/cm2 at ±1 MV/cm, and thermodynamic stability at high temperatures. Al2O3 (3 nm)/HfO2 (1 nm)/In0.53Ga0.47As MOSFETs of 1 μm gate length, with 700 °C-800 °C rapid thermal annealing in source/drain activation, have exhibited high extrinsic drain current (ID) of 1.5 mA/μm, transconductance (Gm) of 0.84 mS/μm, ION/IOFF of ∼104, low sub-threshold swing of 103 mV/decade, and field-effect electron mobility of 1100 cm2/V · s. The devices have also achieved very high intrinsic ID and Gm of 2 mA/μm and 1.2 mS/μm, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 103
- Issue :
- 25
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 93303124
- Full Text :
- https://doi.org/10.1063/1.4852975