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Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity.

Authors :
Gautam, Rajni
Saxena, Manoj
Gupta, R.S.
Gupta, Mridula
Source :
Microelectronics Reliability. Jan2014, Vol. 54 Issue 1, p37-43. 7p.
Publication Year :
2014

Abstract

Highlights: [•] A temperature dependent model is developed for GAA MOSFET having localized charges. [•] Analytical results are verified with simulation results of ATLAS 3D simulator. [•] Variations in temperature sensitivity due to localized charges are studied. [•] Degradation is higher at low temperatures and in subthreshold region. [ABSTRACT FROM AUTHOR]

Subjects

Subjects :
*EFFECT of temperature on metals
*METAL oxide semiconductor field-effect transistors
*THRESHOLD voltage
*ELECTRIC charge
*SENSITIVITY analysis
*SIMULATION methods & models

Details

Language :
English
ISSN :
00262714
Volume :
54
Issue :
1
Database :
Academic Search Index
Journal :
Microelectronics Reliability
Publication Type :
Academic Journal
Accession number :
93415684
Full Text :
https://doi.org/10.1016/j.microrel.2013.09.014
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