Study of atomic layer deposited Zr O2 and Zr O2/ Ti O2 films for resistive switching application.

Thin ZrO2 films and ZrO2/TiO2 bilayers grown by atomic layer deposition (ALD) are integrated into metal-oxide-metal (MOM) structures for investigation of resistive switching (RS) properties. The films have different microstructure depending on the used ALD oxygen source and stacking sequence for the bilayers. Pt/ZrO2/Ti/Pt devices show unipolar RS for oxide thicknesses of 11-18 nm. The devices with O3 grown ZrO2 show higher yield in comparison to the ones with H2O processed oxide. The switching polarity of the Pt/ZrO2/Ti/Pt cells depends on the thickness of the Ti electrode layer. The increase of the Ti layer thickness leads to a change in switching polarity from unipolar to bipolar. The formation of ZrO2/TiO2 bilayers results in changes in the RS behavior of the MOM cells depending on the stacking sequence. [ABSTRACT FROM AUTHOR]