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In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy.

Authors :
Ju, Guangxu
Honda, Yoshio
Tabuchi, Masao
Takeda, Yoshikazu
Amano, Hiroshi
Source :
Journal of Applied Physics. 2014, Vol. 115 Issue 9, p094906-1-094906-6. 6p. 4 Charts, 4 Graphs.
Publication Year :
2014

Abstract

The effects of GaN quantum barriers with changing growth temperatures on the interfacial characteristics of GaN/InGaN single quantum well (SQW) grown on GaN templates by metalorganic vapour phase epitaxy were in situ investigated by X-ray crystal truncation rod (CTR) scattering and X-ray reflectivity measurements at growth temperature using a laboratory level X-ray diffractometer. Comparing the curve-fitting results of X-ray CTR scattering spectra obtained at growth temperature with that at room temperature, the InxGa1-xN with indium composition less than 0.11 was stabile of the indium distribution at the interface during the whole growth processes. By using several monolayers thickness GaN capping layer to protect the InGaN well layer within temperature-ramping process, the interfacial structure of the GaN/InGaN SQW was drastically improved on the basis of the curve-fitting results of X-ray CTR scattering spectra, and the narrow full width at half-maximum and strong luminous intensity were observed in room temperature photoluminescence spectra. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
115
Issue :
9
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
94853812
Full Text :
https://doi.org/10.1063/1.4867640