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900 V/1.6 m\Omega\cdotcm^2 Normally Off Al2O3/GaN MOSFET on Silicon Substrate.
- Source :
-
IEEE Transactions on Electron Devices . Jun2014, Vol. 61 Issue 6, p2035-2040. 6p. - Publication Year :
- 2014
-
Abstract
- In this paper, we report the device performance of a high-voltage normally off Al2O3/GaN MOSFET on the Si substrate. Normally off operation is obtained by multiple cycles of O2 plasma oxidation and wet oxide-removal gate recess process. The recessed normally off GaN MOSFET with 3 \mum gate-drain distance exhibits a maximum drain current of 585 mA/mm at 9 V gate bias. The threshold voltage of the MOSFET is 2.8 V with a standard derivation of 0.2 V on the sample with an area of 2 \,\times\, 2 {\rm cm}^{2} . The gate leakage current is below 10^{-6}~{\rm mA}/{\rm mm} during the whole gate swing up to 9 V and the I{\scriptstyleON}/I{\scriptstyle OFF} ratio is larger than 10^{9} , indicating the good quality of Al2O3 gate insulator. The MOSFET with 10 \mum gate-drain distance shows a three terminal OFF-state breakdown voltage (BV) of 967 V at zero gate-source bias with a drain leakage current criterion of 1 \muA/mm . The specific ON-resistance $(R_{{{\scriptstyle {\rm ON}}},{\rm SP}}) of the device is 1.6 m\Omega\,\cdot\,cm^2 and the power figure of merit (BV^2/R{{\scriptstyle ON},SP}) is 584 MW/cm^2 . [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 61
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 96119688
- Full Text :
- https://doi.org/10.1109/TED.2014.2315994