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P-doping-free III-nitride high electron mobility light-emitting diodes and transistors.
- Source :
-
Applied Physics Letters . 7/21/2014, Vol. 105 Issue 3, p1-5. 5p. 4 Graphs. - Publication Year :
- 2014
-
Abstract
- We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ~2V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level depinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a "universal" property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward and seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 105
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 97255460
- Full Text :
- https://doi.org/10.1063/1.4890238