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Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics.
- Source :
-
Solid-State Electronics . Jan2015, Vol. 103, p127-130. 4p. - Publication Year :
- 2015
-
Abstract
- We focus on slow de-trapping phenomena in AlGaN/GaN MIS-HEMTs with a bilayer dielectric ( in-situ Si 3 N 4 /Al 2 O 3 ) with two different thicknesses of in-situ Si 3 N 4 (10 nm and 5 nm). By using a “filling pulse” at a positive gate voltage, a trap with activation energy of 0.69–0.7 eV was identified to be responsible for the V TH shift. Based on literature, filling conditions, and the simulated band diagrams, this trap is most probably located at the interface between the dielectrics and AlGaN barrier. A physical model is proposed to explain the V TH shift due to the trapping/de-trapping phenomena based on the occupation dynamics of donor traps at the interface between the in-situ Si 3 N 4 /Al 2 O 3 and the AlGaN barrier. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 103
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 99696847
- Full Text :
- https://doi.org/10.1016/j.sse.2014.08.006