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Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.
- Source :
-
Physical review letters [Phys Rev Lett] 2016 Dec 23; Vol. 117 (26), pp. 267201. Date of Electronic Publication: 2016 Dec 23. - Publication Year :
- 2016
-
Abstract
- An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.
Details
- Language :
- English
- ISSN :
- 1079-7114
- Volume :
- 117
- Issue :
- 26
- Database :
- MEDLINE
- Journal :
- Physical review letters
- Publication Type :
- Academic Journal
- Accession number :
- 28059532
- Full Text :
- https://doi.org/10.1103/PhysRevLett.117.267201