Back to Search Start Over

Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.

Authors :
He J
Zhang C
Ghimire NJ
Liang T
Jia C
Jiang J
Tang S
Chen S
He Y
Mo SK
Hwang CC
Hashimoto M
Lu DH
Moritz B
Devereaux TP
Chen YL
Mitchell JF
Shen ZX
Source :
Physical review letters [Phys Rev Lett] 2016 Dec 23; Vol. 117 (26), pp. 267201. Date of Electronic Publication: 2016 Dec 23.
Publication Year :
2016

Abstract

An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.

Details

Language :
English
ISSN :
1079-7114
Volume :
117
Issue :
26
Database :
MEDLINE
Journal :
Physical review letters
Publication Type :
Academic Journal
Accession number :
28059532
Full Text :
https://doi.org/10.1103/PhysRevLett.117.267201