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Multiphase Reset Induced Reliable Dual-Mode Resistance Switching of the Ta/HfO 2 /RuO 2 Memristor.
- Source :
-
ACS applied materials & interfaces [ACS Appl Mater Interfaces] 2024 Apr 03; Vol. 16 (13), pp. 16462-16473. Date of Electronic Publication: 2024 Mar 21. - Publication Year :
- 2024
-
Abstract
- Higher functionality should be achieved within the device-level switching characteristics to secure the operational possibility of mixed-signal data processing within a memristive crossbar array. This work investigated electroforming-free Ta/HfO <subscript>2</subscript> /RuO <subscript>2</subscript> resistive switching devices for digital- and analog-type applications through various structural and electrical analyses. The multiphase reset behavior, induced by the conducting filament modulation and oxygen vacancy generation (annihilation) in the HfO <subscript>2</subscript> layer by interacting with the Ta (RuO <subscript>2</subscript> ) electrode, was utilized for the switching mode change. Therefore, a single device can manifest stable binary switching between low and high resistance states for the digital mode and the precise 8-bit conductance modulation (256 resistance values) via an optimized pulse application for the analog mode. An in-depth analysis of the operation in different modes and comparing memristors with different electrode structures validate the proposed mechanism. The Ta/HfO <subscript>2</subscript> /RuO <subscript>2</subscript> resistive switching device is feasible for a mixed-signal processable memristive array.
Details
- Language :
- English
- ISSN :
- 1944-8252
- Volume :
- 16
- Issue :
- 13
- Database :
- MEDLINE
- Journal :
- ACS applied materials & interfaces
- Publication Type :
- Academic Journal
- Accession number :
- 38513155
- Full Text :
- https://doi.org/10.1021/acsami.3c19523