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Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors.
- Source :
-
Nanoscale horizons [Nanoscale Horiz] 2024 Aug 30. Date of Electronic Publication: 2024 Aug 30. - Publication Year :
- 2024
- Publisher :
- Ahead of Print
-
Abstract
- Recently, tellurium (Te) has been proposed as a promising p-type material; however, even the state-of-the-art results couldn't overcome the critical roadblocks for its practical applications, such as large I - V hysteresis and high off-state leakage current. We developed a novel Te atomic layer deposition (ALD) process combined with a TeO <subscript> x </subscript> seed layer and Al <subscript>2</subscript> O <subscript>3</subscript> passivation to detour the limitations of p-type Te semiconducting materials. Also, we have identified the origins of high hysteresis and off current using the 77 K operation study and passivation process optimization. As a result, a p-type Te field-effect transistor exhibits less than 23 mV hysteresis and a high field-effect mobility of 33 cm <superscript>2</superscript> V <superscript>-1</superscript> s <superscript>-1</superscript> after proper channel thickness modulation and passivation. Also, an ultralow off-current of approximately 1 × 10 <superscript>-14</superscript> A, high on/off ratios in the order of 10 <superscript>8</superscript> , and a steep slope subthreshold swing of 79 mV dec <superscript>-1</superscript> could be achieved at 77 K. These enhancements strongly indicate that the previously reported high off-state current was originated from interfacial defects formed at the metal-Te contact interface. Although further studies concerning this interface are still necessary, the findings herein demonstrate that the major obstacles hindering the use of Te for ultrathin p-channel device applications can be eliminated by proper process optimization.
Details
- Language :
- English
- ISSN :
- 2055-6764
- Database :
- MEDLINE
- Journal :
- Nanoscale horizons
- Publication Type :
- Academic Journal
- Accession number :
- 39212659
- Full Text :
- https://doi.org/10.1039/d4nh00339j