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Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3.
- Source :
- ECS Journal of Solid State Science & Technology; 2015, Vol. 4 Issue 5, pP152-P154, 3p
- Publication Year :
- 2015
Details
- Language :
- English
- ISSN :
- 21628769
- Volume :
- 4
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- ECS Journal of Solid State Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 102478084
- Full Text :
- https://doi.org/10.1149/2.0191505jss