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Growth of Ge Homoepitaxial Films by Metal-Organic Chemical Vapor Deposition Using t-C4H9GeH3.

Authors :
Kohei Suda
Takahiro Kijima
Seiya Ishihara
Naomi Sawamoto
Hideaki Machida
Masato Ishikawa
Hiroshi Sudoh
Yoshio Ohshita
Atsushi Ogura
Source :
ECS Journal of Solid State Science & Technology; 2015, Vol. 4 Issue 5, pP152-P154, 3p
Publication Year :
2015

Details

Language :
English
ISSN :
21628769
Volume :
4
Issue :
5
Database :
Complementary Index
Journal :
ECS Journal of Solid State Science & Technology
Publication Type :
Academic Journal
Accession number :
102478084
Full Text :
https://doi.org/10.1149/2.0191505jss