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Local strain and defects in silicon wafers due to nanoindentation revealed by full-field X-ray microdiffraction imaging.
- Source :
- Journal of Synchrotron Radiation; Jul2015, Vol. 22 Issue 4, p1083-1090, 8p
- Publication Year :
- 2015
-
Abstract
- Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full-field X-ray microdiffraction imaging using synchrotron radiation is employed to investigate the long-range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods. [ABSTRACT FROM AUTHOR]
- Subjects :
- SILICON wafers
NANOINDENTATION
X-ray diffraction
X-ray imaging
SYNCHROTRON radiation
Subjects
Details
- Language :
- English
- ISSN :
- 09090495
- Volume :
- 22
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Synchrotron Radiation
- Publication Type :
- Academic Journal
- Accession number :
- 103641285
- Full Text :
- https://doi.org/10.1107/S1600577515009650