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Atomistic modeling of deactivation and reactivation mechanisms in high-concentration boron profiles.
- Source :
- Applied Physics Letters; 11/17/2003, Vol. 83 Issue 20, p4166-4168, 3p, 3 Graphs
- Publication Year :
- 2003
-
Abstract
- We use kinetic nonlattice Monte Carlo atomistic simulations to investigate the physical mechanisms for boron cluster formation and dissolution at very high B concentrations, and the role of Si interstitials in these processes. For this purpose, high-dose, low-energy B implants and theoretical structures with fully active box shaped B profiles were analyzed. Along with the theoretical B profile, different Si interstitial profiles were included. These structures could be simplifications of the situation resulting from the regrowth of preamorphized or laser annealed B implants. While for B concentrations lower than 10[sup 20] cm[sup -3], B clusters are not formed unless a high Si interstitial concentration overlaps the B profile, our simulation results show that for higher B concentrations, B clusters can be formed even in the presence of only the equilibrium Si interstitial concentration. The existence of a residual concentration of Si interstitials along with the B boxes makes the deactivation faster and more severe. © 2003 American Institute of Physics. [ABSTRACT FROM AUTHOR]
- Subjects :
- BORON
ION implantation
MONTE Carlo method
OPTOELECTRONIC devices
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 83
- Issue :
- 20
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 11421592
- Full Text :
- https://doi.org/10.1063/1.1628391