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Investigation of Self-Heating Effect on Ballistic Transport Characterization for Si FinFETs Featuring Ultrafast Pulsed IV Technique.
- Source :
- IEEE Transactions on Electron Devices; Mar2017, Vol. 64 Issue 3, p909-915, 7p
- Publication Year :
- 2017
-
Abstract
- In this paper, we investigate the carrier transport characteristics of the ultrascaled Si FinFETs. Traditional dc characterization technique is compared with the ultrafast pulsed IV method. Due to the severe self-heating effect introduced in the characterization process, the ballistic transport parameters extracted using dc method would show essential discrepancies from those in the real high-speed IC circuits. Therefore, an ultrafast pulsed IV measurement technique is proposed for accurate ballistic transport characterization. Furthermore, since the series resistance ( R{\textbf {SD}} ) of the Si FinFETs is temperature-dependent, a modified backscattering model is adopted to extract the ballistic transport parameters without the influence of the temperature-variant R{\textbf {SD}} . A ballisticity scaling model was established to predict the scalability of the ballistic transport parameters. It is found that very high ballisticity could be achieved for FinFETs with sub-10-nm technology nodes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 121551540
- Full Text :
- https://doi.org/10.1109/TED.2016.2646907