Resistive Switching Memory: Reliable Ge2Sb2Te5‐Integrated High‐Density Nanoscale Conductive Bridge Random Access Memory using Facile Nitrogen‐Doping Strategy (Adv. Electron. Mater. 11/2018).

A phase change material (PCM) is implemented in a memristive device as an emerging technology for the next generation of nanoelectronics. In article number 1800360, Junsuk Rho and co‐workers develop a programmable metallization memristor with a simple Ag/phase change material/Pt structure using an alloy compound of Ge, Sb, Te (GST). The performance of the memory device is improved by a facile nitrogen‐dopant method. Reliable and reproducible uniform switching characteristics are reported by the nitrogen‐doped GST device. [ABSTRACT FROM AUTHOR]