Growth and Fabrication of High Reverse Breakdown Heterojunction n-Gan: p-6H-Sic Diodes.

Details

Language :

English

ISSN :

19464274

Volume :

743

Issue :

1

Database :

Complementary Index

Journal :

MRS Online Proceedings Library

Publication Type :

Conference

Accession number :

147385337

Full Text :

https://doi.org/10.1557/PROC-743-L6.34