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Reinforcement of double built-in electric fields in spiro-MeOTAD/Ga2O3/Si p–i–n structure for a high-sensitivity solar-blind UV photovoltaic detector.
- Source :
- Journal of Materials Chemistry C; 11/7/2021, Vol. 9 Issue 41, p14788-14798, 11p
- Publication Year :
- 2021
-
Abstract
- A novel p–i–n self-powered solar-blind UV photodetector based on p-type spiro-MeOTAD (spiro), Ga<subscript>2</subscript>O<subscript>3</subscript>, and n-type Si is fabricated. The p-type spiro film is spin-coated on the surface of the Ga<subscript>2</subscript>O<subscript>3</subscript> film deposited on a Si wafer via a metal–organic chemical vapor deposition (MOCVD) system. Benefitting from the superior carrier-separation ability of the double built-in electric fields, the effective carrier transport of the novel vertical structure and the high solar-blind UV transmittance of the spiro film, the self-powered responsivity of the p–i–n-type photodetector based on spiro/Ga<subscript>2</subscript>O<subscript>3</subscript>/Si increases to 4.43 mA W<superscript>−1</superscript> under UV light (λ = 254 nm), which is ∼54-fold that of the Ga<subscript>2</subscript>O<subscript>3</subscript>/Si photodetector (0.22 mA W<superscript>−1</superscript>). Meanwhile, the response speed (0.03/0.196 s) of the p–i–n device is also dramatically improved by introducing the spiro layer. The reported achievements of our work provide a new way to construct a high-sensitivity self-powered UV photodetector for photovoltaic and optoelectronic applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20507526
- Volume :
- 9
- Issue :
- 41
- Database :
- Complementary Index
- Journal :
- Journal of Materials Chemistry C
- Publication Type :
- Academic Journal
- Accession number :
- 153347758
- Full Text :
- https://doi.org/10.1039/d1tc03359j