Controllable epitaxy of quasi-one-dimensional topological insulator α-Bi4Br4 for the application of saturable absorber.

Bismuth bromide (α-Bi₄Br₄) can demonstrate various exotic topological states, including higher-order topological insulator with hinge states and quantum spin Hall insulator with helical edge states. To date, α-Bi₄Br₄ nanowires can be obtained by using the exfoliation method from the bulk. However, it is still a great challenge to efficiently prepare α-Bi₄Br₄ nanowires suitable for potential applications, e.g., saturable absorber in ultrafast pulsed fiber lasers. Here, we report the controllable growth of α-Bi₄Br₄ thin films consisting of nanowires via molecular beam epitaxy technique. We show that the morphology of the α-Bi₄Br₄ nanowires depends on the growth temperature and BiBr₃ flux. In addition, we also achieve α-Bi₄Br₄ nanowires on NbSe₂ and gold substrates. Furthermore, we performed the saturable absorption property of α-Bi₄Br₄ thin films with a modulation depth of 21.58% and mode-locking at 1556.4 nm with a pulse width of 375 fs in the pulsed fiber lasers. Those results demonstrate the synthesis of quasi-1D topological material α-Bi₄Br₄, which is expected to be used for the fundamental research of topological physics and potential applications in optical devices. [ABSTRACT FROM AUTHOR]