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Evaluation on Temperature-Dependent Transient V T Instability in p-GaN Gate HEMTs under Negative Gate Stress by Fast Sweeping Characterization.
- Source :
- Micromachines; Jul2022, Vol. 13 Issue 7, pN.PAG-N.PAG, 10p
- Publication Year :
- 2022
-
Abstract
- In this work, temperature-dependent transient threshold voltage (V<subscript>T</subscript>) instability behaviors in p-GaN/AlGaN/GaN HEMTs, with both Schottky gate (SG) and Ohmic gate (OG), were investigated systematically, under negative gate bias stress, by a fast voltage sweeping method. For SG devices, a concave-shaped V<subscript>T</subscript> evolution gradually occurs with the increase in temperature, and the concave peak appears faster with increasing reverse bias stress, followed by a corresponding convex-shaped V<subscript>T</subscript> recovery process. In contrast, the concave-shaped V<subscript>T</subscript> evolution for OG devices that occurred at room temperature gradually disappears in the opposite shifting direction with the increasing temperature, but the corresponding convex-shaped V<subscript>T</subscript> recovery process is not observed, substituted, instead, with a quick and monotonic recovery process to the initial state. To explain these interesting and different phenomena, we proposed physical mechanisms of time and temperature-dependent hole trapping, releasing, and transport, in terms of the discrepancies in barrier height and space charge region, at the metal/p-GaN junction between SG and OG HEMTs. [ABSTRACT FROM AUTHOR]
- Subjects :
- SPACE charge
THRESHOLD voltage
JOB stress
GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 13
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 158298762
- Full Text :
- https://doi.org/10.3390/mi13071096