Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices.

Details

Language :

English

ISSN :

25220128

Volume :

6

Issue :

4

Database :

Complementary Index

Journal :

Advanced Composites & Hybrid Materials

Publication Type :

Academic Journal

Accession number :

168970734

Full Text :

https://doi.org/10.1007/s42114-023-00713-5