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Implantation assisted copper diffusion: A different approach for the preparation of CuInS2/In2S3 p-n junction.
- Source :
- Applied Physics Letters; 7/3/2006, Vol. 89 Issue 1, p013510, 3p, 2 Charts, 3 Graphs
- Publication Year :
- 2006
-
Abstract
- Copper indium sulfide thin films were prepared using copper diffusion into argon ion implanted In<subscript>2</subscript>S<subscript>3</subscript> thin films. A comparative study of copper diffusion in pristine and ion implanted In<subscript>2</subscript>S<subscript>3</subscript> samples was also performed. It was found that copper indium sulfide formation was much better in argon implanted samples compared to that in unimplanted samples. Copper diffusion in implanted samples enabled us to prepare an In<subscript>2</subscript>S<subscript>3</subscript>/CuInS<subscript>2</subscript> solar cell. The fill factor of the cell prepared was 30.2% and the efficiency was 0.34%. [ABSTRACT FROM AUTHOR]
- Subjects :
- COPPER sulfide
THIN films
DIFFUSION
ARGON
ION implantation
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 89
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 21602095
- Full Text :
- https://doi.org/10.1063/1.2219135