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Thickness dependence of in-plane dielectric and ferroelectric properties of Ba0.7Sr0.3TiO3 thin films epitaxially grown on LaAlO3.

Authors :
Zhou, X. Y.
Wang, D. Y.
Zheng, R. K.
Tian, H. Y.
Qi, J. Q.
Chan, H. L. W.
Choy, C. L.
Wang, Y.
Source :
Applied Physics Letters; 3/26/2007, Vol. 90 Issue 13, p132902-1, 3p, 4 Graphs
Publication Year :
2007

Abstract

The authors have studied the effects of film thickness on the lattice strain and in-plane dielectric and ferroelectric properties of Ba<subscript>0.7</subscript>Sr<subscript>0.3</subscript>TiO<subscript>3</subscript> thin films epitaxially grown on LaAlO<subscript>3</subscript> (001) single crystal substrates. With increasing film thickness from 20 to 300 nm, the in-plane lattice parameter (a) increased from 0.395 to 0.402 nm while the out-of-plane lattice parameter (c) remained almost unchanged, which led to an increased a/c ratio (tetragonality) changing from 0.998 to 1.012 and consequently resulted in a shift of Curie temperature from 306 to 360 K associated with an increase of the in-plane remnant polarization and dielectric constant of the film. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
90
Issue :
13
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
24721218
Full Text :
https://doi.org/10.1063/1.2716865