Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz.

In this letter, we report on the microwave power and efficiency performance of AIGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V_ds = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V_ds = 48 V. These results are the highest reported power performance for AIGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates. [ABSTRACT FROM AUTHOR]