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Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz.
- Source :
- IEEE Electron Device Letters; Nov2007, Vol. 28 Issue 11, p945-947, 3p
- Publication Year :
- 2007
-
Abstract
- In this letter, we report on the microwave power and efficiency performance of AIGaN/GaN high-electron mobility transistors (HEMTs) grown by ammonia molecular beam epitaxy (ammonia-MBE) on SiC substrates. At 4 GHz, an output power density of 11.1 W/mm with an associated power-added efficiency (PAE) of 63% was measured at V<subscript>ds</subscript> = 48 V on passivated devices. At 10 GHz, an output power density of 11.2 W/mm with a PAE of 58% was achieved for V<subscript>ds</subscript> = 48 V. These results are the highest reported power performance for AIGaN/GaN HEMTs grown by ammonia-MBE and the first reported for ammonia-MBE on SiC substrates. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 28
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 27513984
- Full Text :
- https://doi.org/10.1109/LED.2007.907266