Fluorine behavior in BF implanted polysilicon films subjected to rapid thermal annealing.

The physical and electrical properties of BF implanted polysilicon films subjected to rapid thermal annealing (RTA) are presented. It is found that the out diffusion of F and its segregation at polysilicon/silicon oxide interface during RTA are the major causes of F anomalous migration. Fluorine bubbles were observed in BF implanted samples at doses of 1×10 and 5×10 cm after RTA. [ABSTRACT FROM AUTHOR]