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A high accuracy and high throughput electron beam reticle writing system for 16M dynamic random access memory class and beyond devices.

Authors :
Takigawa, T.
Ogawa, Y.
Yoshikawa, R.
Koyama, K.
Tamamushi, S.
Ikenaga, O.
Abe, T.
Hattori, K.
Nishimura, E.
Kusakabe, H.
Wada, H.
Nishino, H.
Anze, H.
Goto, M.
Shigemitsu, F.
Munakata, M.
Shimazaki, K.
Watanabe, S.
Saito, T.
Ilo, T.
Source :
Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena; 1990, Vol. 8 Issue 6, p1877-1881, 5p
Publication Year :
1990

Details

Language :
English
ISSN :
0734211X
Volume :
8
Issue :
6
Database :
Complementary Index
Journal :
Journal of Vacuum Science & Technology: Part B-Microelectronics Processing & Phenomena
Publication Type :
Academic Journal
Accession number :
74326474
Full Text :
https://doi.org/10.1116/1.585177