Selectively dry gate recessed GaAs metal-semiconductor field-effect transistors, high electron mobility transistors, and monolithic microwave integrated circuits.

Details

Language :

English

ISSN :

10711023

Volume :

11

Issue :

6

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74339955

Full Text :

https://doi.org/10.1116/1.586465