Fabrication of heterojunction bipolar transistors with buried subcollector layers for reduction of base-collector capacitance by molecular beam epitaxy regrowth.

Details

Language :

English

ISSN :

10711023

Volume :

16

Issue :

3

Database :

Complementary Index

Journal :

Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures

Publication Type :

Academic Journal

Accession number :

74343080

Full Text :

https://doi.org/10.1116/1.590231