CoSi2/Si1-xGex/Si(001) heterostructures formed through different reaction routes: Silicidation-induced strain relaxation, defect formation, and interlayer diffusion.

Authors :: Nur, O.
Willander, M.
Hultman, L.
Radamson, H. H.
Hansson, G. V.
Sardela, M. R.
Greene, J. E.
Source :: Journal of Applied Physics; 12/15/1995, Vol. 78 Issue 12, p7063, 7p, 4 Black and White Photographs, 2 Diagrams, 3 Graphs
Publication Year :: 1995
Abstract: Presents information on a study which investigated the microstructure and microchemistry of CoSi[sub2]/Si[sub1-x]Ge/Si(001) heterostructures using a combination of high-resolution cross-sectional transmission electron microscopy, high-resolution x-ray diffraction and secondary-ion mass spectroscopy. Experimental procedure; Results and discussion; Conclusions.

Subjects :: HETEROSTRUCTURES
MICROSTRUCTURE
MICROCHEMISTRY
TRANSMISSION electron microscopy
X-ray diffractometers

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