Effect of channel width on ESD characteristics of SOI MOS device.

Authors :: Yujuan He
Yunfei En
Hongwei Luo
Qingzhong Xiao
Source :: 2011 International Conference on Quality, Reliability, Risk, Maintenance & Safety Engineering (ICQR2MSE); 2011, p469-471, 3p
Publication Year :: 2011

Language :: English
ISBNs :: 9781457712296
Database :: Complementary Index
Journal :: 2011 International Conference on Quality, Reliability, Risk, Maintenance & Safety Engineering (ICQR2MSE)
Publication Type :: Conference
Accession number :: 80352471
Full Text :: https://doi.org/10.1109/ICQR2MSE.2011.5976655