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New anode design concept of 600V thin wafer PT-IGBT with very low dose p-buffer and transparent p-emitter.
- Source :
- ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices & ICs, 2003; 2003, p75-78, 4p
- Publication Year :
- 2003
Details
- Language :
- English
- ISBNs :
- 9780780378766
- Database :
- Complementary Index
- Journal :
- ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices & ICs, 2003
- Publication Type :
- Conference
- Accession number :
- 81186119
- Full Text :
- https://doi.org/10.1109/ISPSD.2003.1225234