4.5 kV 4H-SiC diodes with ideal forward characteristic.

Authors :: Lendenmann, H.
Mukhitdinov, A.
Dahlquist, F.
Bleichner, H.
Irwin, M.
Soderholm, R.
Source :: Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216); 2001, p31-34, 4p
Publication Year :: 2001

Language :: English
ISBNs :: 9784886860569
Database :: Complementary Index
Journal :: Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)
Publication Type :: Conference
Accession number :: 81228505
Full Text :: https://doi.org/10.1109/ISPSD.2001.934553