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45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process.

Authors :
Yu, S.
Lu, J.-P.
Mehrad, F.
Bu, H.
Shanware, A.
Ramin, M.
Pas, M.
Visokay, R.
Vitale, S.
Yang, S.-H.
Jiang, P.
Hall, L.
Montgomery, C.
Obeng, Y.
Bowen, C.
Hong, H.
Tran, J.
Chapman, R.
Bushman, S.
Machala, S.
Source :
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p221-224, 4p
Publication Year :
2005

Details

Language :
English
ISBNs :
9780780392687
Database :
Complementary Index
Journal :
IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest
Publication Type :
Conference
Accession number :
81610575
Full Text :
https://doi.org/10.1109/IEDM.2005.1609312
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