4-bit per cell NROM reliability.

Authors :: Eitan, B.
Cohen, G.
Shappir, A.
Eli Lusky
Givant, A.
Janai, M.
Bloom, I.
Polansky, Y.
Dadashev, O.
Lavan, A.
Sahar, R.
Maayan, E.
Source :: IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest; 2005, p539-542, 4p
Publication Year :: 2005

Language :: English
ISBNs :: 9780780392687
Database :: Complementary Index
Journal :: IEEE International Electron Devices Meeting, 2005. IEDM Technical Digest
Publication Type :: Conference
Accession number :: 81610665
Full Text :: https://doi.org/10.1109/IEDM.2005.1609402