Molybdenum metal gate MOS technology for post-SiO2 gate dielectrics.

Authors :: Qiang Lu
Lin, R.
Ranade, P.
Yee Chia Yeo
Xiaofan Meng
Takeuchi, H.
Tsu-Jae King
Chenming Hu
Hongfa Luan
Songjoo Lee
Weiping Bai
Choong-Ho Lee
Dim-Lee Kwong
Xin Guo
Xiewen Wang
Tso-Ping Ma
Source :: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138); 2000, p641-644, 4p
Publication Year :: 2000

Language :: English
ISBNs :: 9780780364387
Database :: Complementary Index
Journal :: International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)
Publication Type :: Conference
Accession number :: 81623686
Full Text :: https://doi.org/10.1109/IEDM.2000.904401