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Tri-gate bulk MOSFET design for improved robustness to random dopant fluctuations.
- Source :
- Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE; 2008, p1-2, 2p
- Publication Year :
- 2008
Details
- Language :
- English
- ISBNs :
- 9781424420711
- Database :
- Complementary Index
- Journal :
- Silicon Nanoelectronics Workshop, 2008. SNW 2008. IEEE
- Publication Type :
- Conference
- Accession number :
- 81663896
- Full Text :
- https://doi.org/10.1109/SNW.2008.5418451