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Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 µm wavelength range.

Authors :
Shau, R.
Ortsiefer, M.
Zigldrum, M.
Rosskopf, J.
Bo¨hm, G.
Ko¨hler, F.
Amann, M.-C.
Source :
Electronics Letters (Institution of Engineering & Technology); 07/20/2000, Vol. 36 Issue 15, p1286-1287, 2p
Publication Year :
2000

Details

Language :
English
ISSN :
00135194
Volume :
36
Issue :
15
Database :
Complementary Index
Journal :
Electronics Letters (Institution of Engineering & Technology)
Publication Type :
Academic Journal
Accession number :
86352173
Full Text :
https://doi.org/10.1049/el:20000934