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Low-threshold InGaAlAs/InP vertical-cavity surface-emitting laser diodes for 1.8 µm wavelength range.
- Source :
- Electronics Letters (Institution of Engineering & Technology); 07/20/2000, Vol. 36 Issue 15, p1286-1287, 2p
- Publication Year :
- 2000
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 36
- Issue :
- 15
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Institution of Engineering & Technology)
- Publication Type :
- Academic Journal
- Accession number :
- 86352173
- Full Text :
- https://doi.org/10.1049/el:20000934