A novel degradation mechanism of AlGaN/GaN/Silicon heterostructures related to the generation of interface traps.

Details

Language :

English

ISBNs :

9781467348720

Database :

Complementary Index

Journal :

2012 International Electron Devices Meeting

Publication Type :

Conference

Accession number :

87039567

Full Text :

https://doi.org/10.1109/IEDM.2012.6479035