Positron annihilation study of the diffusion of oxygen in annealed silicon-doped gallium arsenide.

Authors :: Towner, A. C.
Nathwani, M.
Saleh, A. S.
van der Werf, D. P.
Rice-Evans, P.
Source :: Philosophical Magazine B; 11/20/2002, Vol. 82 Issue 17, p1809-1815, 7p
Publication Year :: 2002
Abstract: Positron annihilation spectroscopy has been applied to silicon-doped GaAs grown by molecular-beam epitaxy. Annealing SiO[sub 2] capped samples at 930°C causes the SiGa - VGa vacancies to become positively charged. The SiO[sub 2] caps cause oxygen to diffuse beneath the surface and the spectroscopy leads to the first measurement of the oxygen diffusion coefficient in GaAs. The application of a new analysis program ROYPROF reveals the creation of internal electric fields. [ABSTRACT FROM AUTHOR]

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