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MOSFET characteristics of ultra thin CVD Si3N4 gate dielectrics.

Authors :
Song, S.C.
Luan, H.F.
Chen, Y.Y.
Kwong, D.L.
Gardener, M.
Fulford, J.
Allen, M.
Source :
28th European Solid-State Device Research Conference; 1998, p232-235, 4p
Publication Year :
1998

Details

Language :
English
ISBNs :
9782863322345
Database :
Complementary Index
Journal :
28th European Solid-State Device Research Conference
Publication Type :
Conference
Accession number :
92145363

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