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Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBTs under bias and temperature stress.
- Source :
- IEEE Electron Device Letters; 1998, Vol. 19 Issue 8, p303-305, 3p
- Publication Year :
- 1998
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 19
- Issue :
- 8
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 92796823
- Full Text :
- https://doi.org/10.1109/55.704407