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Low temperature epitaxial growth of germanium islands in active regions of silicon interband tunneling diodes
- Source :
- Materials Science and Engineering B: Solid-State Materials for Advanced Technology; 2002, Vol. 89 Issue: 1-3 p106-110, 5p
- Publication Year :
- 2002
Details
- Language :
- English
- ISSN :
- 09215107
- Volume :
- 89
- Issue :
- 1-3
- Database :
- Supplemental Index
- Journal :
- Materials Science and Engineering B: Solid-State Materials for Advanced Technology
- Publication Type :
- Periodical
- Accession number :
- ejs3417044
- Full Text :
- https://doi.org/10.1016/S0921-5107(01)00811-X