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Measurement of on-wafer transistor noise parameters without a tuner using unrestricted noise sources

Authors :
Lázaro Guillén, Antoni
Maya Sánchez, Mª del Carmen
Pradell i Cara, Lluís
Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones
Source :
UPCommons. Portal del coneixement obert de la UPC, Universitat Politècnica de Catalunya (UPC), Recercat. Dipósit de la Recerca de Catalunya, Universitat Jaume I
Publication Year :
2002
Publisher :
HORIZON HOUSE PUBLICATIONS INC, 2002.

Abstract

The authors present a method for calibrating the four noise parameters of a noise receiver which does not require a tuner The method permits using general (mismatched) noise sources, which may present very different source reflection coefficients between their hot and cold states. The method is applied to the calibration of a noise set-up using on-wafer noise sources (a reverse-biased cold-FET and an avalanche noise diode). Experimental validation of the receiver calibration and its application to the determination Of on-wafer FET noise parameters to 40 GHz is presented.

Details

Language :
English
Database :
OpenAIRE
Journal :
UPCommons. Portal del coneixement obert de la UPC, Universitat Politècnica de Catalunya (UPC), Recercat. Dipósit de la Recerca de Catalunya, Universitat Jaume I
Accession number :
edsair.dedup.wf.001..f1fe4dde7f0c33d990ee5078674d3d97