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Measurement of on-wafer transistor noise parameters without a tuner using unrestricted noise sources
- Source :
- UPCommons. Portal del coneixement obert de la UPC, Universitat Politècnica de Catalunya (UPC), Recercat. Dipósit de la Recerca de Catalunya, Universitat Jaume I
- Publication Year :
- 2002
- Publisher :
- HORIZON HOUSE PUBLICATIONS INC, 2002.
-
Abstract
- The authors present a method for calibrating the four noise parameters of a noise receiver which does not require a tuner The method permits using general (mismatched) noise sources, which may present very different source reflection coefficients between their hot and cold states. The method is applied to the calibration of a noise set-up using on-wafer noise sources (a reverse-biased cold-FET and an avalanche noise diode). Experimental validation of the receiver calibration and its application to the determination Of on-wafer FET noise parameters to 40 GHz is presented.
- Subjects :
- semiconductor device noise
avalanche noise diode
noise receiver
electric noise measurement
integrated circuit noise
Microwave measurements
source reflection coefficients
calibration
Field-effect transistors
reverse-biased cold-FET
Microones -- Mesurament
40 GHz
Enginyeria de la telecomunicació::Radiocomunicació i exploració electromagnètica::Circuits de microones, radiofreqüència i ones mil·limètriques [Àrees temàtiques de la UPC]
noise set-up
on-wafer transistor noise parameters
ismatched noise sources
Noise Measurement
microwave measurement
receivers
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- UPCommons. Portal del coneixement obert de la UPC, Universitat Politècnica de Catalunya (UPC), Recercat. Dipósit de la Recerca de Catalunya, Universitat Jaume I
- Accession number :
- edsair.dedup.wf.001..f1fe4dde7f0c33d990ee5078674d3d97