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SnO2: rGO transparent semiconducting thin films under annealing by hydrazine—modification of optical gap and electrical resistance

Authors :
P. Shayeghi Sabzevar
M. M. Bagheri-Mohagheghi
A. Shirpay
Source :
Journal of Materials Science: Materials in Electronics. 34
Publication Year :
2023
Publisher :
Springer Science and Business Media LLC, 2023.

Subjects

Subjects :
Electrical and Electronic Engineering
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Details

ISSN :
1573482X and 09574522
Volume :
34
Database :
OpenAIRE
Journal :
Journal of Materials Science: Materials in Electronics
Accession number :
edsair.doi...........06be63b48f71e66848085769052e3bb1

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