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Analysis of recombination centers near an interface of a metal–SiO2–Si structure by double carrier pulse deep-level transient spectroscopy

Authors :
Tomohiko Hara
Yoshio Ohshita
Source :
AIP Advances. 12:095316
Publication Year :
2022
Publisher :
AIP Publishing, 2022.

Abstract

This paper proposes a new double carrier pulse deep-level transient spectroscopy (DC-DLTS) method that is applicable for evaluating metal–insulator–semiconductor (MIS) structures and the recombination centers in carrier-selective contact solar cells. Specifically, this study evaluated recombination characteristics of defects induced in bulk Si near SiO2/Si interfaces by reactive plasma deposition (RPD). In this method, a pulse voltage was first applied to inject majority carriers. Subsequently, a second pulse voltage was applied, which allowed minority carriers to be injected into the MIS structure. With these two types of carrier injections, carriers were recombined in recombination-active defects, and the DC-DLTS spectrum changed. During the injection of minority carriers, some majority carriers were thermally emitted from the defects, resulting in a decrease in the signal intensity. The recombination activity was analyzed by considering the effect of thermal emission on the change in signal intensity. The number of induced defect types and defect properties were estimated using Bayesian optimization. According to the results, three types of electron traps were generated using the RPD process. Based on the DC-DLTS results, defects with energy level 0.57 eV below the conduction band and capture cross section of ∼10−15 cm2 act as recombination centers.

Subjects

Subjects :
General Physics and Astronomy

Details

ISSN :
21583226
Volume :
12
Database :
OpenAIRE
Journal :
AIP Advances
Accession number :
edsair.doi...........0b9252d14999888761fa1b78c4c811be
Full Text :
https://doi.org/10.1063/5.0106319