Mobility Enhancement and Gate-Induced-Drain-Leakage Analysis of Strained-SiGe Channel p-MOSFETs with Higher-κ LaLuO 3 Gate Dielectric

A strained-SiGe p-channel metal-oxide-semiconductor-field-effect transistors (p-MOSFETS) with higher-κ LaLuO3 gate dielectric was fabricated and electrically characterized. The novel higher-κ (κ~30) gate dielectric, LaLuO3, was deposited by molecular-beam deposition and shows good quality for integration into the transistor. The transistor features good output and transfer characteristics. The hole mobility was extracted by the splitting C—V method and a value of 200cm2/Vs was obtained for strong inversion conditions, which indicates that the hole mobility is well enhanced by SiGe channel and that the LaLuO3 layer does not induce additional significant carrier scattering. Gate induced drain leakage is measured and analyzed by using an analytical model. Band-to-band tunneling efficiencies under high and low fields are found to be different, and the tunneling mechanism is discussed.