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AlGaN/GaN MIS-HFET with improvement in high temperature gate bias stress-induced reliability
- Source :
- 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
- Publication Year :
- 2014
- Publisher :
- IEEE, 2014.
-
Abstract
- CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance R c (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (L GD ) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON , sp ) (1.45 mΩ-cm 2 ). The importance of epitaxial quality in a key industrial qualification item: high temperature gate bias (HTGB) stress-induced voltage instability issue is figured out and a breakthrough by optimizing GaN epitaxial layer for improvement of MIS-HFET is demonstrated. A low V th shift of the optimized MIS-HFET is achieved ~ 0.14V with qualification stress condition V G of -15 V at ambient temperature of 150 oC for 128 hours.
Details
- Database :
- OpenAIRE
- Journal :
- 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
- Accession number :
- edsair.doi...........15f0b75d4642c065a0ced749472125e9